China Wholesale Semiconductor Laser property Factories – LPT-3 Experimental System for Electro-Optic Modulation – Labor

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China Wholesale Semiconductor Laser property Factories – LPT-3 Experimental System for Electro-Optic Modulation – Labor Detail:

Experiment Examples

1. Display electro-optic modulation waveform

2. Observe electro-optic modulation phenomenon

3. Measure half-wave voltage of an electro-optic crystal

4. Calculate electro-optic coefficient

5. Demonstrate optical communication using electro-optic modulation technique

Specifications

Power Supply for Electro-Optic Modulation
Output Sine-Wave Modulation Amplitude	0 ~ 300 V (Continuously Adjustable)
DC Offset Voltage Output	0 ~ 600 V (Continuously Adjustable)
Output Frequency	1 kHz
Electro-Optic Crystal (LiNbO₃)
Dimension	5×2.5×60 mm
Electrodes	Silver Coating
Flatness	< λ/8 @633 nm
Transparent Wavelength Range	420 ~ 5200 nm
He-Ne Laser	1.0 ~ 1.5 mW @ 632.8 nm
Rotary Polarizer	Minimum Reading Scale: 1°
Photoreceiver	PIN Photocell

Part List

Description	Qty
Optical Rail	1
Electro-Optic Modulation Controller	1
Photoreceiver	1
He-Ne Laser	1
Laser Holder	1
LiNbO₃Crystal	1
BNC Cable	2
Four-Axis Adjustable Holder	2
Rotary Holder	3
Polarizer	1
Glan Prism	1
Quarter-Wave Plate	1
Alignment Aperture	1
Speaker	1
Ground Glass Screen	1

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