China Wholesale Semiconductor Laser property Suppliers – LPT-7 Diode-Pumped Solid-State Laser Demonstrator – Labor

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China Wholesale Semiconductor Laser property Suppliers – LPT-7 Diode-Pumped Solid-State Laser Demonstrator – Labor Detail:

Specifications

Semiconductor Laser
CW Output Power	≤ 500 mW
Polarization	TE
Center Wavelength	808 ± 10 nm
Operation Temperature Range	10 ~ 40 °C
Driving Current	0 ~ 500 mA
Nd: YVO₄ Crystal
Nd Doping Concentration	0.1 ~ 3 atm%
Dimension	3×3×1 mm
Flatness	< λ/10 @632.8 nm
Coating	AR@1064 nm, R<0.1%; 808=”" t=”">90%
KTP Crystal
Transmissive Wavelength Range	0.35 ~ 4.5 µm
Electro-Optic Coefficient	r₃₃=36 pm/V
Dimension	2×2×5 mm
Output Mirror
Diameter	Φ 6 mm
Radius of Curvature	50 mm
He-Ne Alignment Laser	≤ 1 mW @632.8 nm
IR Viewing Card	Spectral response range: 0.7 ~ 1.6 µm
Laser Safety Goggles	OD= 4+ for 808 nm and 1064 nm
Optical Power Meter	2 μW ~ 200 mW, 6 scales

PARTS LIST

No.	Description	Parameter	Qty
1	Optical Rail	with base and dust cover, He-Ne laser power supply is installed inside base	1
2	He-Ne Laser Holder	with carrier	1
3	Alignment Aperture	f1 mm holewith carrier	1
4	Filter	f10 mm aperturewith carrier	1
5	Output Mirror	BK7, f6 mm R =50 mmwith 4-axis adjustable holder and carrier	1
6	KTP Crystal	2×2×5 mmwith 2-axis adjustable holder and carrier	1
7	Nd:YVO₄Crystal	3×3×1 mmwith 2-axis adjustable holder and carrier	1
8	808nm LD (laser diode)	≤ 500 mWwith 4-axis adjustable holder and carrier	1
9	Detector Head Holder	with carrier	1
10	Infrared Viewing Card	750 ~1600 nm	1
11	He-Ne Laser Tube	1.5mW@632.8 nm	1
12	Optical Power Meter	2 μW～200 mW (6 ranges)	1
13	Detector Head	with cover and post	1
14	LD Current Controller	0 ~ 500 mA	1
15	Power Cord		3
16	Instruction Manual	V1.0	1

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Acousto-Optic Effect

Diode Laser

Electro Optic Modulation

He-Ne Laser

Polarization Rotation Effect

Semiconductor Laser Experiment

Semiconductor Laser Property

Solid State Laser

Verdet Constant

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