LEEM-10 Experimental Apparatus of PN Junction Characteristics

Experiments

1. At the same temperature, measure the forward volt-ampere characteristics of the PN junction and calculate the Boltzmann constant;

2. The forward current I remains unchanged, the V-T curve of the forward voltage of the PN junction is mapped, the sensitivity is calculated, and the band gap width of the measured PN junction material is estimated;

3. Application experiment: use a given PN junction to measure unknown temperature;

4. Innovative experiment: According to the experimental data, estimate the reverse saturation current Is of the PN junction.

5. Exploratory experiment: Observe the influence of the size of the composite current.

The main technical parameters

1. A variety of PN junctions with packaging, including silicon tubes, germanium tubes, NPN transistors, etc.;

2. The current output range is 10nA～1mA, adjustable in 4 sections, fine adjustment: minimum 1nA, driving voltage

About 5V, skip words ≤ 1 word/min;

3. Dedicated ultra-high resistance 4-1/2 digit digital voltmeter, two levels of internal resistance: 10MΩ, ultra-high resistance level (greater than 1GΩ), measurement range: 0～2V, resolution: 0.1mV; measurement uncertainty: 0.1%± 2 words.

4. Experimental temperature: room temperature～99℃, digital thermometer: 0～100℃, resolution 0.1℃;

5. Including electric heater, Dewar flask and beaker.