LPT-7 Diode-Pumped Solid-State Laser Demonstrator
Specifications
Semiconductor Laser | |
CW Output Power | ≤ 500 mW |
Polarization | TE |
Center Wavelength | 808 ± 10 nm |
Operation Temperature Range | 10 ~ 40 °C |
Driving Current | 0 ~ 500 mA |
Nd: YVO4 Crystal | |
Nd Doping Concentration | 0.1 ~ 3 atm% |
Dimension | 3×3×1 mm |
Flatness | < λ/10 @632.8 nm |
Coating | AR@1064 nm, R<0.1%; 808=”" t=”">90% |
KTP Crystal | |
Transmissive Wavelength Range | 0.35 ~ 4.5 µm |
Electro-Optic Coefficient | r33=36 pm/V |
Dimension | 2×2×5 mm |
Output Mirror | |
Diameter | Φ 6 mm |
Radius of Curvature | 50 mm |
He-Ne Alignment Laser | ≤ 1 mW @632.8 nm |
IR Viewing Card | Spectral response range: 0.7 ~ 1.6 µm |
Laser Safety Goggles | OD= 4+ for 808 nm and 1064 nm |
Optical Power Meter | 2 μW ~ 200 mW, 6 scales |
PARTS LIST
No. |
Description |
Parameter |
Qty |
1 |
Optical Rail | with base and dust cover, He-Ne laser power supply is installed inside base |
1 |
2 |
He-Ne Laser Holder | with carrier |
1 |
3 |
Alignment Aperture | f1 mm holewith carrier |
1 |
4 |
Filter | f10 mm aperturewith carrier |
1 |
5 |
Output Mirror | BK7, f6 mm R =50 mmwith 4-axis adjustable holder and carrier |
1 |
6 |
KTP Crystal | 2×2×5 mmwith 2-axis adjustable holder and carrier |
1 |
7 |
Nd:YVO4 Crystal | 3×3×1 mmwith 2-axis adjustable holder and carrier |
1 |
8 |
808nm LD (laser diode) | ≤ 500 mWwith 4-axis adjustable holder and carrier |
1 |
9 |
Detector Head Holder | with carrier |
1 |
10 |
Infrared Viewing Card | 750 ~1600 nm |
1 |
11 |
He-Ne Laser Tube | 1.5mW@632.8 nm |
1 |
12 |
Optical Power Meter | 2 μW~200 mW (6 ranges) |
1 |
13 |
Detector Head | with cover and post |
1 |
14 |
LD Current Controller | 0 ~ 500 mA |
1 |
15 |
Power Cord |
3 |
|
16 |
Instruction Manual | V1.0 |
1 |
Write your message here and send it to us